Check with seller High temperature annealing of SiC crystal Brahmakulam

Published date: January 12, 2021
  • Location: Brahmakulam, Kerala, India

High temperature annealing of SiC crystal

The most common and mature method for SiC crystal growth is still physical vapor transport (PVT), which is a gas phase growth method with high growth temperature and high requirements for raw materials and process parameters. In recent years, a lot of time and energy have been invested in the development of PVT process at home and abroad. The quality and size of SiC crystal have been greatly improved. However, there are still structural defects and micro stress in the crystal. The existence of structural defects will worsen the performance of SiC based devices, thus affecting the application of devices. The existence of stress will make SiC crystal easy to break in the processing stage, thus reducing the yield of SiC wafer. Therefore, it is very important to reduce the microstress and microstress in SiC crystal. High temperature annealing can effectively reduce the microstress and eliminate the microstress.

Annealing is a method of heating materials to a certain temperature in a specific atmosphere, holding for a period of time, and then cooling at an appropriate rate. It is a very common heat treatment process in the field of materials. Annealing treatment plays an important role in the post-treatment process of artificial crystal. For example, after the growth of single crystal Si, sapphire and other crystals, the corresponding annealing treatment should be carried out to eliminate the stress and defects in the crystal and improve the crystal quality.

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